Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.
- OSTI ID:
- 22492235
- Journal Information:
- AIP Advances, Vol. 5, Issue 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices
Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals