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Title: Magnetoresistance of galfenol-based magnetic tunnel junction

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.
Authors:
 [1] ; ; ; ; ;  [2] ;  [2] ;  [3] ;  [2] ;  [3] ;  [2] ;  [3] ; ;  [4]
  1. Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy)
  2. Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy)
  3. (Italy)
  4. Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)
Publication Date:
OSTI Identifier:
22492227
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMPLITUDES; CONCENTRATION RATIO; ELECTRON BEAMS; EVAPORATION; GALLIUM ALLOYS; IRON BASE ALLOYS; LAYERS; MAGNETIZATION; MAGNETORESISTANCE; MAGNETOSTRICTION; MEMORY DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR JUNCTIONS; SENSORS; TUNNEL EFFECT