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Title: Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

InP{sub 1-x}Bi{sub x} epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP{sub 1-x}Bi{sub x} films Photoluminescence (PL) was investigated. N-type doping in the InP{sub 1-x}Bi{sub x} epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [2] ; ;  [1] ;  [1] ;  [3]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)
  2. (China)
  3. (Sweden)
Publication Date:
OSTI Identifier:
22492215
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; BISMUTH COMPOUNDS; BISMUTH PHOSPHATES; CONCENTRATION RATIO; ELECTRONS; FILMS; HALL EFFECT; INDIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RECOMBINATION; SILICON; TEMPERATURE DEPENDENCE