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Title: Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi’an, China 710071 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22492214
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DEPLETION LAYER; ELECTRICAL PROPERTIES; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HALL EFFECT; INDIUM COMPOUNDS; INTERFACES; MICROWAVE RADIATION; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; X-RAY DIFFRACTION