Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition
Abstract
Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.
- Authors:
-
- School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi’an, China 710071 (China)
- Publication Date:
- OSTI Identifier:
- 22492214
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DEPLETION LAYER; ELECTRICAL PROPERTIES; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HALL EFFECT; INDIUM COMPOUNDS; INTERFACES; MICROWAVE RADIATION; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; X-RAY DIFFRACTION
Citation Formats
Zhang, Yachao, Zhou, Xiaowei, Xu, Shengrui, Wang, Zhizhe, Chen, Zhibin, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue, and Key Laboratory of Wide Band Gap Semiconductor Materials and Devices. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition. United States: N. p., 2015.
Web. doi:10.1063/1.4937127.
Zhang, Yachao, Zhou, Xiaowei, Xu, Shengrui, Wang, Zhizhe, Chen, Zhibin, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue, & Key Laboratory of Wide Band Gap Semiconductor Materials and Devices. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition. United States. https://doi.org/10.1063/1.4937127
Zhang, Yachao, Zhou, Xiaowei, Xu, Shengrui, Wang, Zhizhe, Chen, Zhibin, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue, and Key Laboratory of Wide Band Gap Semiconductor Materials and Devices. 2015.
"Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition". United States. https://doi.org/10.1063/1.4937127.
@article{osti_22492214,
title = {Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition},
author = {Zhang, Yachao and Zhou, Xiaowei and Xu, Shengrui and Wang, Zhizhe and Chen, Zhibin and Zhang, Jinfeng and Zhang, Jincheng and Hao, Yue and Key Laboratory of Wide Band Gap Semiconductor Materials and Devices},
abstractNote = {Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.},
doi = {10.1063/1.4937127},
url = {https://www.osti.gov/biblio/22492214},
journal = {AIP Advances},
issn = {2158-3226},
number = 12,
volume = 5,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}