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Title: Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.
Authors:
;  [1] ;  [2] ; ;  [3] ;  [4]
  1. School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China)
  2. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  3. Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
  4. Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)
Publication Date:
OSTI Identifier:
22492201
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHROMIUM ALLOYS; COBALT ALLOYS; CONTROL; CURIE POINT; FILMS; GALLIUM ALLOYS; GALLIUM ARSENIDES; HEUSLER ALLOYS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; PRECIPITATION; SPIN; SPUTTERING; STOICHIOMETRY