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Title: An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4]
  1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
  2. (Japan)
  3. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan)
  4. Powder & Ceramics Division, Korea Institute of Materials Science, 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22492190
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ELECTRIC POTENTIAL; ELECTRONS; EXCITATION; INTERFACES; IRRADIATION; PALLADIUM; SILICON; SILICON OXIDES; SOLIDS; TEMPERATURE RANGE 0273-0400 K