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Title: Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.
Authors:
; ; ; ;  [1] ;  [2]
  1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814 Japan (Japan)
  2. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 Japan (Japan)
Publication Date:
OSTI Identifier:
22492189
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CAPACITANCE; ELECTRODES; ELECTRONS; EVALUATION; FABRICATION; NANOWIRES; OXIDATION; QUANTUM DOTS; SILICON