Structural evolution of Ge-rich Si{sub 1−x}Ge{sub x} films deposited by jet-ICPCVD
- Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
- College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000 (China)
Amorphous Ge-rich Si{sub 1−x}Ge{sub x} films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.
- OSTI ID:
- 22492182
- Journal Information:
- AIP Advances, Vol. 5, Issue 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultra-highly doped Si{sub 1-x}Ge{sub x}(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
Formation, structure, and phonon confinement effect of nanocrystalline Si{sub 1-x}Ge{sub x} in SiO{sub 2}-Si-Ge cosputtered films