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Title: Structural evolution of Ge-rich Si{sub 1−x}Ge{sub x} films deposited by jet-ICPCVD

Amorphous Ge-rich Si{sub 1−x}Ge{sub x} films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.
Authors:
; ;  [1] ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
  2. (China)
  3. College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000 (China)
Publication Date:
OSTI Identifier:
22492182
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILMS; GERMANIUM; GERMANIUM SILICIDES; MICROSTRUCTURE; PLASMA; SEGREGATION; SILICON; SOLID CLUSTERS; SURFACES; TEMPERATURE DEPENDENCE