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Title: Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells

Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals.
Authors:
; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22492176
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CHARGE CARRIERS; CRYSTAL GROWTH; GALLIUM NITRIDES; HEAT SINKS; POTENTIALS; QUANTUM WELLS; RECOMBINATION; SCREW DISLOCATIONS