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Title: Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10{sup 4}. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)
  2. (ROEL), Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)
Publication Date:
OSTI Identifier:
22492170
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LAYERS; MELTING POINTS; MORPHOLOGY; ORGANIC POLYMERS; ORGANIC SEMICONDUCTORS; POLARIZATION; SPIN; SURFACES; X-RAY DIFFRACTION