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Title: Bilayer avalanche spin-diode logic

A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [4]
  1. Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France)
  2. Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
  3. Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22492167
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC RADIATION; ELECTRONS; INDIUM ANTIMONIDES; LAYERS; LOGIC CIRCUITS; MAGNETIC FIELDS; PERFORMANCE; P-N JUNCTIONS; RECOMMENDATIONS; SPIN; VELOCITY