Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments
Abstract
Carrier distributions near n-type epitaxially-grown Ge(100) surfaces with high impurity concentrations (1 × 10{sup 20} cm{sup −3}) were studied using high resolution electron energy loss spectroscopy (HREELS) upon surface treatments in aqueous solutions of HF and HCl. After surface treatments with HCl and HF, the molecular vibration modes distinctly showed either chloride or hydride terminations of Ge surfaces with negligible oxidation. The free-carrier concentration profile was inferred from the conduction band plasmon measurements as a function of the incident electron energies employing a dielectric theory simulation with a 4-layer structure and an effective electron mass of 0.02m{sub 0}. A carrier-free layer of 40 and 24 Å were derived for HCl- and HF-treated Ge(100), respectively. The surface band bending was estimated to be 0.32 eV for HF-treated Ge. HCl-treated Ge surfaces showed a band bending of 0.91 eV attributed to the strong effect of the surface Cl-Ge dipole.
- Authors:
-
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562 (Japan)
- Publication Date:
- OSTI Identifier:
- 22492155
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; AQUEOUS SOLUTIONS; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; EPITAXY; EV RANGE; GERMANIUM; HYDRIDES; HYDROCHLORIC ACID; HYDROFLUORIC ACID; LAYERS; N-TYPE CONDUCTORS; OSCILLATION MODES; OXIDATION; SURFACE TREATMENTS; SURFACES
Citation Formats
Park, S. J., Bolotov, L., Uchida, N., and Tada, T. Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments. United States: N. p., 2015.
Web. doi:10.1063/1.4934673.
Park, S. J., Bolotov, L., Uchida, N., & Tada, T. Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments. United States. https://doi.org/10.1063/1.4934673
Park, S. J., Bolotov, L., Uchida, N., and Tada, T. 2015.
"Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments". United States. https://doi.org/10.1063/1.4934673.
@article{osti_22492155,
title = {Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments},
author = {Park, S. J. and Bolotov, L. and Uchida, N. and Tada, T.},
abstractNote = {Carrier distributions near n-type epitaxially-grown Ge(100) surfaces with high impurity concentrations (1 × 10{sup 20} cm{sup −3}) were studied using high resolution electron energy loss spectroscopy (HREELS) upon surface treatments in aqueous solutions of HF and HCl. After surface treatments with HCl and HF, the molecular vibration modes distinctly showed either chloride or hydride terminations of Ge surfaces with negligible oxidation. The free-carrier concentration profile was inferred from the conduction band plasmon measurements as a function of the incident electron energies employing a dielectric theory simulation with a 4-layer structure and an effective electron mass of 0.02m{sub 0}. A carrier-free layer of 40 and 24 Å were derived for HCl- and HF-treated Ge(100), respectively. The surface band bending was estimated to be 0.32 eV for HF-treated Ge. HCl-treated Ge surfaces showed a band bending of 0.91 eV attributed to the strong effect of the surface Cl-Ge dipole.},
doi = {10.1063/1.4934673},
url = {https://www.osti.gov/biblio/22492155},
journal = {AIP Advances},
issn = {2158-3226},
number = 10,
volume = 5,
place = {United States},
year = {Thu Oct 15 00:00:00 EDT 2015},
month = {Thu Oct 15 00:00:00 EDT 2015}
}