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Title: Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.
Authors:
;  [1] ;  [2]
  1. Department of Physics, National Central University, Jungli, 32054, Taiwan (China)
  2. Chang Gung University, Taoyuan, Taiwan 33302 (China)
Publication Date:
OSTI Identifier:
22492136
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CAPACITANCE; DIFFUSION; DISLOCATIONS; DOPED MATERIALS; ION IMPLANTATION; PHOSPHORUS; PROBES; SILICON; TRANSIENTS; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL SYSTEMS