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Title: Radiative decay rates of impurity states in semiconductor nanocrystals

Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. ITMO University, 197101 Saint Petersburg (Russian Federation)
  2. (Australia)
Publication Date:
OSTI Identifier:
22492135
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SELENIDES; CRYSTALS; DOPED MATERIALS; GALLIUM ARSENIDES; GERMANIUM; IMPURITIES; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; ZINC SULFIDES