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Title: Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))
Authors:
; ;  [1] ; ;  [2] ; ; ;  [3] ;  [4] ;  [5]
  1. University of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova (Italy)
  2. University of Cambridge, Dept. Materials Science & Metallurgy, Cambridge, CB2 3QZ (United Kingdom)
  3. University of Padova, Department of Physics, and Astronomy via Marzolo 8 35131 Padova (Italy)
  4. University of Florence, Department of Physics, Via Sansone, 1 - 50019 Sesto Fiorentino (Italy)
  5. University of Florence, Department of Engineering, Via di Santa Marta, 3, 50139 Firenze (Italy)
Publication Date:
OSTI Identifier:
22492132
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; CARRIER LIFETIME; CHANNELING; CONCENTRATION RATIO; DIFFUSION; DISLOCATIONS; GALLIUM NITRIDES; HEAT TREATMENTS; ION MICROPROBE ANALYSIS; LIGHT EMITTING DIODES; LUMINESCENCE; MASS SPECTROSCOPY; P-TYPE CONDUCTORS; QUANTUM WELLS; REDUCTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE DEPENDENCE