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Title: Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784 (Korea, Republic of)
  2. Department of Physics, Inha University, Incheon 402-751 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22492119
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ABUNDANCE; ANODES; ASYMMETRY; CONCENTRATION RATIO; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRONS; GALLIUM COMPOUNDS; HOLES; INDIUM NITRIDES; MODULATION; QUANTUM WELLS; RECOMBINATION; VISIBLE RADIATION