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Title: Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.
Authors:
 [1] ;  [2] ; ; ; ;  [3]
  1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  2. (United Kingdom)
  3. Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
Publication Date:
OSTI Identifier:
22490978
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physics of Plasmas; Journal Volume: 22; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; COMPUTERIZED SIMULATION; DESIGN; ELECTRIC POTENTIAL; ELECTRON BEAMS; INTERACTIONS; OPTIMIZATION; OSCILLATORS; PEAK LOAD; PERFORMANCE