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Title: Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic moduli of heavily doped (∼1 × 10{sup 21} cm{sup −3}) p- and n-type c-Si are observed to be lower by 5.3%–7.5% than the estimated value for intrinsic (∼1 × 10{sup 14} cm{sup −3}) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si (Γ-X). The value is predominantly higher than the reported value of a decrease of 1%–3% in stiffness as an effect of impurity in c-Si.
Authors:
; ; ;  [1]
  1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
Publication Date:
OSTI Identifier:
22490807
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DOPED MATERIALS; FLEXIBILITY; IMPURITIES; PRESSURE COEFFICIENT; STRAINS