Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

Journal Article · Tue Jul 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4927152· OSTI ID:22490807

Dhara, Sandip; Dash, S.; Tyagi, A. K. ^[1]

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1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic moduli of heavily doped (∼1 × 10{sup 21} cm{sup −3}) p- and n-type c-Si are observed to be lower by 5.3%–7.5% than the estimated value for intrinsic (∼1 × 10{sup 14} cm{sup −3}) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si (Γ-X). The value is predominantly higher than the reported value of a decrease of 1%–3% in stiffness as an effect of impurity in c-Si.

• OSTI ID: 22490807
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
DOPED MATERIALS
FLEXIBILITY
IMPURITIES
PRESSURE COEFFICIENT
STRAINS