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Title: Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)
  2. (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France)
  3. IES CNRS-UMR 5214, 34095 Montpellier (France)
  4. Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France)
  5. (LMA), Instituto de Nanociencia de Aragón (INA)—ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)
Publication Date:
OSTI Identifier:
22490804
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; CHEMICAL COMPOSITION; CHEMICAL PROPERTIES; CHEMISTRY; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; LASERS; LAYERS; MOLECULAR BEAM EPITAXY; PHASE STUDIES; RESOLUTION; STABILITY; STRAINS; TRANSMISSION ELECTRON MICROSCOPY