skip to main content

SciTech ConnectSciTech Connect

Title: Defects evolution and their impacts on conductivity of indium tin oxide thin films upon thermal treatment

Indium tin oxide (ITO) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering. The influence of annealing temperature on the crystallite, surface morphology, defects evolution, and electrical property of the thin films was studied. The conductivity of the ITO films was significantly enhanced by two orders of magnitude by increasing the annealing temperature up to 600 °C, which was interpreted in point view of defects evolution in ITO films as revealed by positron annihilation. It was interesting to find that positron diffusion length was amazingly comparable to crystallite size in ITO films annealed below 300 °C, indicating positrons were preferentially localized and annihilated in defects around crystallite boundaries. By further increasing the temperature, positron diffusion length was far beyond the grain size with little increment. This demonstrated that defects were effectively removed around grain boundaries. The results indicated defect structure around crystallite/grain boundaries played an important role on carrier transportation in nanocrystal ITO films.
Authors:
; ; ; ; ;  [1]
  1. Key Laboratory of Nuclear Solid State Physics Hubei Province, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)
Publication Date:
OSTI Identifier:
22490784
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARRIERS; COMPARATIVE EVALUATIONS; DIFFUSION LENGTH; ELECTRICAL PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE; INDIUM; MAGNETRONS; MORPHOLOGY; NANOSTRUCTURES; POSITRONS; RADIOWAVE RADIATION; SILICON; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TIN OXIDES