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Title: Pre-nitridation induced In incorporation in In{sub x}Ga{sub 1−x}N nanorods on Si(111) grown by molecular beam epitaxy

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of In{sub x}Ga{sub 1−x}N films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 °C and 500 °C, respectively. In incorporation is also seen to be enhanced to ≈28% at 400 °C to yield a stable green emission, while the nanorods grown at 500 °C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature.
Authors:
; ;  [1]
  1. Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India)
Publication Date:
OSTI Identifier:
22490782
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATALYSTS; ELECTRON DIFFRACTION; FIELD EMISSION; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NANOSTRUCTURES; NITRIDATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY