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Title: Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

We discuss the necessity of the exact implicit Momentum Relaxation Time (MRT) solution of the Boltzmann transport equation in order to achieve reliable carrier mobility results in semiconductor nanowires. Firstly, the implicit solution for a 1D electron gas with a isotropic bandstructure is presented resulting in the formulation of a simple matrix system. Using this solution as a reference, the explicit approach is demonstrated to be inaccurate for the calculation of inelastic anisotropic mechanisms such as polar optical phonons, characteristic of III-V materials. Its validity for elastic and isotropic mechanisms is also evaluated. Finally, the implications of the MRT explicit approach inaccuracies on the total mobility of Si and III-V NWs are studied.
Authors:
; ; ; ;  [1]
  1. Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071–Granada (Spain)
Publication Date:
OSTI Identifier:
22490780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; BOLTZMANN EQUATION; CARRIER MOBILITY; ELECTRON GAS; MATHEMATICAL SOLUTIONS; NANOWIRES; PHONONS; RELAXATION TIME; SEMICONDUCTOR MATERIALS