skip to main content

Title: Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Materials Research Centre, Indian Institute of Science, Bangalore (India)
  2. (India)
Publication Date:
OSTI Identifier:
22490779
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BUFFERS; DISLOCATIONS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDATION; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRAPS; X-RAY DIFFRACTION