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Title: Formation of GaN quantum dots by molecular beam epitaxy using NH{sub 3} as nitrogen source

Self-assembled GaN quantum dots (QDs) in Al{sub x}Ga{sub 1−x}N (0.3 ≤ x ≤ 1) were grown on c-plane sapphire and Si (111) substrates by molecular beam epitaxy using ammonia as nitrogen source. The QD formation temperature was varied from 650 °C to 800 °C. Surprisingly, the density and size of QDs formed in this temperature range are very similar. This has been explained by considering together experimental results obtained from reflection high-energy electron diffraction, atomic force microscopy, and photoluminescence to discuss the interplay between thermodynamics and kinetics in the QD formation mechanisms. Finally, possible ways to better control the QD optical properties are proposed.
Authors:
; ;  [1]
  1. CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, Valbonne 06560 (France)
Publication Date:
OSTI Identifier:
22490777
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMMONIA; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; SAPPHIRE; THERMODYNAMICS