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Title: Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0–1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22490765
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALCULATION METHODS; CONFINEMENT; DEGREES OF FREEDOM; DESIGN; ELECTRONIC STRUCTURE; EPITAXY; EV RANGE; OPTOELECTRONIC DEVICES; SPECTRA; STRAINS; VARIATIONS; ZINC SELENIDES; ZINC TELLURIDES