Controlling electronic structure through epitaxial strain in ZnSe/ZnTe nano-heterostructures

Journal Article · Tue Jul 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4923385· OSTI ID:22490765

Sharma, V.; Ramprasad, R. ^[1]

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1. Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States)

Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe heterostructures. We find that a wide range of band gaps (spanning the visible solar spectrum) and band offsets (0–1.5 eV) is accessible across the heterostructures in a controllable manner via reasonable levels of epitaxial strain. In addition to quantum confinement effects, strain in ZnSe/ZnTe heterostructures may thus be viewed as a powerful degree of freedom that can enable the rational design of optoelectronic devices.

• OSTI ID: 22490765
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CALCULATION METHODS
CONFINEMENT
DEGREES OF FREEDOM
DESIGN
ELECTRONIC STRUCTURE
EPITAXY
EV RANGE
OPTOELECTRONIC DEVICES
SPECTRA
STRAINS
VARIATIONS
ZINC SELENIDES
ZINC TELLURIDES