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Title: Growth and characterization of (110) InAs quantum well metamorphic heterostructures

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in the quantum Hall regime.
Authors:
; ; ; ;  [1] ;  [2] ;  [2] ;  [3] ;  [3]
  1. U.S. Naval Research Laboratory Washington DC 20375 (United States)
  2. California NanoSystems Institute, University of California, Santa Barbara, California 93106 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22490740
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; DISLOCATIONS; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; NUCLEATION; QUANTUM WELLS; SPIN; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS