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Title: Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ;  [1] ;  [3] ;  [2] ;  [2]
  1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
  2. (China)
  3. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 (China)
Publication Date:
OSTI Identifier:
22490726
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPOSITION; DIELECTRIC PROPERTIES; DOPED MATERIALS; FERROELECTRIC MATERIALS; LEAKAGE CURRENT; LEAKS; MATHEMATICAL SOLUTIONS; MICROSTRUCTURE; POLARIZATION; SILICON OXIDES; SUBSTRATES; THIN FILMS; VACANCIES; VANADIUM