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Title: Processing and crystallographic structure of non-equilibrium Si-doped HfO{sub 2}

Si-doped HfO{sub 2} was confirmed to exist as a non-equilibrium state. The crystallographic structures of Si-doped HfO{sub 2} were studied using high-resolution synchrotron X-ray diffraction and the Rietveld refinement method. Incorporation of Si into HfO{sub 2} and diffusion of Si out of (Hf,Si)O{sub 2} were determined as a function of calcination temperature. Higher thermal energy input at elevated calcination temperatures resulted in the formation of HfSiO{sub 4}, which is the expected major secondary phase in Si-doped HfO{sub 2}. The effect of SiO{sub 2} particle size (nano- and micron-sized) on the formation of Si-doped HfO{sub 2} was also determined. Nano-crystalline SiO{sub 2} was found to incorporate into HfO{sub 2} more readily.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. School of Information Science and Technology, Northwest University, Xi'an 710127 (China)
Publication Date:
OSTI Identifier:
22490724
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALCINATION; CRYSTALLOGRAPHY; DIFFUSION; DOPED MATERIALS; EQUILIBRIUM; HAFNIUM OXIDES; HAFNIUM SILICATES; HYDROFLUORIC ACID; NANOSTRUCTURES; PARTICLE SIZE; PROCESSING; RESOLUTION; SILICON OXIDES; X-RAY DIFFRACTION