skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Bulk plasma fragmentation in a C{sub 4}F{sub 8} inductively coupled plasma: A hybrid modeling study

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4923230· OSTI ID:22490721
;  [1]; ;  [1];  [2]
  1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China)
  2. Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium)

A hybrid model is used to investigate the fragmentation of C{sub 4}F{sub 8} inductive discharges. Indeed, the resulting reactive species are crucial for the optimization of the Si-based etching process, since they determine the mechanisms of fluorination, polymerization, and sputtering. In this paper, we present the dissociation degree, the density ratio of F vs. C{sub x}F{sub y} (i.e., fluorocarbon (fc) neutrals), the neutral vs. positive ion density ratio, details on the neutral and ion components, and fractions of various fc neutrals (or ions) in the total fc neutral (or ion) density in a C{sub 4}F{sub 8} inductively coupled plasma source, as well as the effect of pressure and power on these results. To analyze the fragmentation behavior, the electron density and temperature and electron energy probability function (EEPF) are investigated. Moreover, the main electron-impact generation sources for all considered neutrals and ions are determined from the complicated C{sub 4}F{sub 8} reaction set used in the model. The C{sub 4}F{sub 8} plasma fragmentation is explained, taking into account many factors, such as the EEPF characteristics, the dominance of primary and secondary processes, and the thresholds of dissociation and ionization. The simulation results are compared with experiments from literature, and reasonable agreement is obtained. Some discrepancies are observed, which can probably be attributed to the simplified polymer surface kinetics assumed in the model.

OSTI ID:
22490721
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Chemistry in long residence time fluorocarbon plasmas
Journal Article · Sun Mar 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:22490721

Effects of feedstock availability on the negative ion behavior in a C{sub 4}F{sub 8} inductively coupled plasma
Journal Article · Tue Jul 21 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:22490721

Role of C{sub 2}F{sub 4}, CF{sub 2}, and ions in C{sub 4}F{sub 8}/Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor
Journal Article · Sun May 01 00:00:00 EDT 2005 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:22490721