skip to main content

SciTech ConnectSciTech Connect

Title: Stabilization of amorphous structure in silicon thin film by adding germanium

The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si{sub 1−x}Ge{sub x} (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N{sub 2} atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si{sub 1−x}Ge{sub x} (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement.
Authors:
 [1] ;  [2] ;  [1]
  1. Nanosystem Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22490715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; ANNEALING; BOND LENGTHS; CRYSTALLIZATION; ELECTRON BEAMS; EVAPORATION; GERMANIUM; GLASS; PHONONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SI UNITS; SILICON; SUBSTRATES; THIN FILMS