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Title: Stability and electronic properties of SiC nanowire adsorbed on MoS{sub 2} monolayer

Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS{sub 2} monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.
Authors:
; ;  [1] ;  [2]
  1. Department of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India)
  2. Department of Physics, Panjab University, Chandigarh, 160014 (India)
Publication Date:
OSTI Identifier:
22490605
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; MOLYBDENUM SULFIDES; NANOWIRES; OPTOELECTRONIC DEVICES; PHASE STABILITY; REDUCTION; VALENCE