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Title: Effect of hafnium substitution on the dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}

CaCu{sub 3}Ti{sub 4-x}Hf{sub x}O{sub 12} (x = 0, 0.04, 0.08 and 0.12 i.e. 0, 1, 2 and 3 atomic %) has been prepared by conventional solid state reaction method. The structural, dielectric and optical properties of the prepared samples were studied using x-ray diffraction, impedance analyzer and diffuse reflectance spectroscopy. With increasing Hf concentration dielectric permittivity decreases whereas the dielectric loss slightly increases and optical band gap almost remain constant. The results are explained on the basis of increase in the structural disorder and porosity of the sample with Hf doping.
Authors:
; ; ; ;  [1]
  1. Material Research Laboratory, Discipline of Physics & MSE, Indian Institute of Technology, Indore-452017 (India)
Publication Date:
OSTI Identifier:
22490603
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; CALCIUM COMPOUNDS; CONCENTRATION RATIO; COPPER COMPOUNDS; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; IMPEDANCE; OPTICAL PROPERTIES; PERMITTIVITY; POROSITY; RELAXATION LOSSES; SOLIDS; SPECTRAL REFLECTANCE; TITANATES; X-RAY DIFFRACTION