Pseudogap behaviour in FeTe and FeSe probed by photoemission
Journal Article
·
· AIP Conference Proceedings
- Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India)
- Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)
- CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi-110012 (India)
This study reports the valence band photoelectron spectroscopic studies of FeTe and FeSe. A doping induced and temperature dependent pseudogap occur near the Fermi level. The spectral weight transfer occurs due to the change in chalcogen height due to lowering of temperature. This result is in analogy with the reduction in chalcogen height due to the replacement of Te by Se.
- OSTI ID:
- 22490564
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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