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Title: Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4918160· OSTI ID:22490561
; ; ;  [1];  [2]
  1. Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India)
  2. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

OSTI ID:
22490561
Journal Information:
AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English