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Title: Silicon/HfO{sub 2} interface: Effects of proton irradiation

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation.
Authors:
;  [1]
  1. Division of Electronics and Microelectronics, IIIT-A, Devghat, Jhalwa, Allahabad-211012 (India)
Publication Date:
OSTI Identifier:
22490552
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONS; HAFNIUM OXIDES; INTERFACES; IRRADIATION; KEV RANGE; LAYERS; PHYSICAL RADIATION EFFECTS; PROTONS; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES