A comparative study of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiated Si NPN BJTs

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918146· OSTI ID:22490551

Krishnaveni, S. ^[1]; Yashoda, T. ^[2]; Dinesh, C. M. ^[3]; Krishnakumar, K. S. ^[4]; Jayashree, B. ^[5]; Ramani, ^[6]

---

1. Department of studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)
2. Deparment of Physics, AVK College for women, Hassan-573201 (India)
3. Department of Physics, Govt. First grade college for women, Chintamani-563125 (India)
4. Department of Physics, APS College of Engineering (India)
5. Department of Physics, Maharanis Science College for Women, Bangalore-560001 (India)
6. Department of Physics, Bangalore University, Jnanabharathi, Bangalore-560056 (India)

The impact of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor.

• OSTI ID: 22490551
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
BORON IONS
CAPACITANCE
DIRECT CURRENT
ELECTRIC POTENTIAL
GAIN
ION BEAMS
IRRADIATION
JUNCTION TRANSISTORS
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
SILICON
TEMPERATURE RANGE 0273-0400 K