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Title: A comparative study of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiated Si NPN BJTs

The impact of 30MeV boron{sup 4+} and 60MeV oxygen{sup 8+} ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6]
  1. Department of studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)
  2. Deparment of Physics, AVK College for women, Hassan-573201 (India)
  3. Department of Physics, Govt. First grade college for women, Chintamani-563125 (India)
  4. Department of Physics, APS College of Engineering (India)
  5. Department of Physics, Maharanis Science College for Women, Bangalore-560001 (India)
  6. Department of Physics, Bangalore University, Jnanabharathi, Bangalore-560056 (India)
Publication Date:
OSTI Identifier:
22490551
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON; BORON IONS; CAPACITANCE; DIRECT CURRENT; ELECTRIC POTENTIAL; GAIN; ION BEAMS; IRRADIATION; JUNCTION TRANSISTORS; OXYGEN IONS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE RANGE 0273-0400 K