skip to main content

Title: Oxygen ion irradiation on AlGaN/GaN heterostructure grown on silicon substrate by MOCVD method

In the present work, we have reported 100 MeV O{sup 7+} ion irradiation with 1×10{sup 12} and 5×10{sup 12} ions/cm{sup 2} fluence on AlGaN/GaN heterostructures grown on silicon substrate by Metal Organic Chemical Vapour Deposition (MOCVD). The Irradiated samples were characterized by High Resolution X-Ray Diffraction (HRXRD), Atomic Force Microscope (AFM) and Photoluminescence (PL). Crystalline quality has been analysed before and after irradiation using HRXRD. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. A sharp band-edge emission in the as grown samples was observed at ∼3.4 eV in GaN and 3.82 for AlGaN. The band-edge absorption intensity reduced due to irradiation and these results have been discussed in view of the damage created by the incident ions. In general the effect of irradiation induced-damages were analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.
Authors:
; ; ;  [1] ;  [2]
  1. Crystal Growth Centre, Anna University Chennai-600025 (India)
  2. Inter University Accelerator Centre, New Delhi- 110 067 (India)
Publication Date:
OSTI Identifier:
22490545
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS; EV RANGE; GALLIUM NITRIDES; ION BEAMS; IRRADIATION; MORPHOLOGY; MULTICHARGED IONS; ORGANOMETALLIC COMPOUNDS; OXYGEN IONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; SILICON; SUBSTRATES; X-RAY DIFFRACTION