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Title: Rectifying behaviour of spin coated pn hetero-junction

Rectifying pn hetero- junction is fabricated with an acceptor p-type organic semiconductor namely tetra- chloro dihydroxy tetra-iodo fluorescein (Rose Bengal (RB)) followed by an inorganic n-type ZnO semiconductor on indium tin oxide (ITO) substrate. The n-type ZnO films are formed by unintentional doping and doping with aluminium (Al) and yttrium (Y) donors. The surface morphology and the distribution of grains are observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM). The current-voltage (I-V) characteristic of the rectifying diode is measured to characterize the junction properties. The I-V plots obtained from the hetero- junction with electric contact shows a diode characteristic different from that of an ideal behavior. The overall efficiency of the diode exhibits a greater dependency on the film crystallinity, carrier concentration, and reverse saturation current.
Authors:
;  [1]
  1. Nanomaterials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli – 620 015 (India)
Publication Date:
OSTI Identifier:
22490544
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; FILMS; FLUORESCEIN; HETEROJUNCTIONS; INDIUM; MORPHOLOGY; N-TYPE CONDUCTORS; ORGANIC SEMICONDUCTORS; P-N JUNCTIONS; ROSE BENGAL; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; TIN OXIDES; YTTRIUM; ZINC OXIDES