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Title: Nonlinear absorption coefficient of pulsed laser deposited MgZnO thin film

We report the imaginary part of 3{sup rd} order nonlinear susceptibility and the nonlinear absorption coefficient of Mg doped ZnO thin film using standard Z-scan technique. The origin of nonlinear absorption is attributed to the two photon absorption followed by the free carrier absorption because of the presence of oxygen vacancy defects. We have also confirmed the experimental results with the theoretical results obtained by considering the steady state response of a two level atom with the monochromatic field models.
Authors:
; ; ;  [1] ;  [2]
  1. Laser Bhawan, School of Physics, Devi Ahilya University, Khandwa Road, Indore-452001 (India)
  2. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India)
Publication Date:
OSTI Identifier:
22490538
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ATOMS; CHARGE CARRIERS; DOPED MATERIALS; MAGNESIUM; MAGNETIC SUSCEPTIBILITY; MONOCHROMATIC RADIATION; NONLINEAR PROBLEMS; OXYGEN; PHOTONS; THIN FILMS; VACANCIES; ZINC OXIDES