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Title: Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Cochin University of Science and Technology, Cochin-682022 (India)
  2. Department of Instrumentation, Cochin University of Science and Technology, Cochin-682022 (India)
Publication Date:
OSTI Identifier:
22490536
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABSORPTION SPECTRA; ANNEALING; BUFFERS; DIFFUSION; EMISSION SPECTRA; ENERGY GAP; LAYERS; PYROLYSIS; SOLAR CELLS; SPRAYS; THIN FILMS; TIN; ZINC OXIDES