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Title: Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode

This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured at different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.
Authors:
; ;  [1]
  1. Department of Applied Physics, Indian School of Mines, Dhanbad - 826004, Jharkhand (India)
Publication Date:
OSTI Identifier:
22490533
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SELENIDES; COPPER; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; EV RANGE; EXPECTATION VALUE; N-TYPE CONDUCTORS; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION