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Title: Electronic properties and absorption spectra of ZnSnP{sub 2} using mBJ potential

We present the energy bands and density of states of ZnSnP{sub 2} using full potential linearized augmented plane wave method with modified Becke Johnson potential. It is found that this compound has a direct band gap of about 2.01 eV at Γ point, which originates from the energy difference between P-3p and Sn-5s states. In addition, we have also calculated absorption spectra in the solar energy range and compared it with that of bulk Si to explore the applicability of ZnSnP{sub 2} in photovoltaic and optoelectronic devices.
Authors:
;  [1]
  1. Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur-313001 (India)
Publication Date:
OSTI Identifier:
22490532
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; COMPARATIVE EVALUATIONS; DENSITY OF STATES; ELECTRONIC STRUCTURE; EV RANGE; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC EFFECT; POTENTIALS; SILICON; SOLAR ENERGY; TIN PHOSPHIDES; WAVE PROPAGATION; ZINC COMPOUNDS