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Title: Growth of AlN nanostructure on GaN using MOCVD

Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al{sub 2}O{sub 3} template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 µm and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al{sub 2}O{sub 3} template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD)
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Crystal Growth Centre, Anna University, Chennai-600025 (India)
Publication Date:
OSTI Identifier:
22490530
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CATALYSTS; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS; EPITAXY; GALLIUM NITRIDES; HEXAGONAL LATTICES; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; RESOLUTION; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION