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Title: Opto-electronic transport properties of graphene oxide based devices

Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Physics, Midnapore College, Midnapore-721101 (India)
  2. Department of Physics & Technophysics, Vidyasagar University, Midnapore-721102 (India)
Publication Date:
OSTI Identifier:
22490523
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON OXIDES; CHARGE TRANSPORT; GRAPHENE; MATHEMATICAL SOLUTIONS; NANOCOMPOSITES; PERFORMANCE; PHOTOCURRENTS; SURFACES; THIN FILMS; VISIBLE RADIATION