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Title: Effect of Ag doping and annealing on thermoelectric properties of PbTe

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.
Authors:
; ; ;  [1] ;  [2]
  1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)
  2. Institute of Physics, University Gottingen (Germany)
Publication Date:
OSTI Identifier:
22490522
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; LEAD TELLURIDES; PROBES; SILVER; THERMOELECTRIC PROPERTIES; THIN FILMS; X-RAY DIFFRACTION