Electronic and dielectric properties of vacancy clusters as quantum dot in silicane

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918021· OSTI ID:22490468

Mohan, Brij; Sharma, Munish; Ahluwalia, P. K. ^[1]; Kumar, Ashok ^[2]

---

1. Department of Physics, Himachal Pradesh University, Shimla-171005 (India)
2. Department of Physics, Panjab University, Chandigarh-160014 (India)

First principal study of electronic and dielectric properties of a silicane nanostructure containing cluster of vacancies as quantum dot (QD) has been investigated within density functional theory (DFT). Electronic band structure and corresponding density of states show the decrease in band gap with increasing size of quantum dot. A band gap of 0.38 eV has been achieved for silicane containing 3QD. Electron energy loss spectra (EEL) function shows additional plasmonic features for QD containing silicane in visible region, which may have potential applications in optoelectronic devices.

• OSTI ID: 22490468
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DENSITY FUNCTIONAL METHOD
DENSITY OF STATES
DIELECTRIC PROPERTIES
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY GAP
ENERGY-LOSS SPECTROSCOPY
EV RANGE
OPTOELECTRONIC DEVICES
PLASMONS
POTENTIALS
QUANTUM DOTS
SILICONES
VACANCIES