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Title: Theoretical investigation of Sn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} alloy in crystalline phase

Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is technologically important for phase-change random access memory applications. It has been shown that the 2.2 atomic % doping of Sn weakens the Ge–Te bond strength while maintaining the symmetry of stable phase of GST. The influence of Sn doping upon the phase change characteristics of the crystalline GST alloy has been investigated by ab initio calculations. The lattice parameter, average interface distances between two adjacent (111) layers, equilibrium volume, metallic character and electrical resistance has been calculated for the stable phase of GST and Sn-doped GST.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160014 (India)
  2. University Institute of Engineering and Technology Hoshiarpur-146001 (India)
Publication Date:
OSTI Identifier:
22490443
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EQUILIBRIUM; GERMANIUM TELLURIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; RANDOMNESS; SYMMETRY; TIN